IndiumV3, Main, Repository, bibRecord, 001039

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Identifieur interne : 001039 ( Main/Repository ); précédent : 001038; suivant : 001040

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Auteurs : RBID : Pascal:13-0229293

Descripteurs français

Pascal (Inist)
- Etude comparative, Sonde Kelvin, Condensateur, Couche tampon, Etat électronique surface, Transfert électron, Séparation charge, Transformation ordre désordre, Ordre désordre, Semiconducteur, Chalcopyrite, Cellule solaire, Cuivre, Gallium, Sulfure de cadmium, Sulfure d'indium, Oxyde de zinc, CdS, In2S3, ZnO, 8432T, 7320A, 8460J.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Buffer layer, Cadmium sulfide, Capacitor, Chalcopyrite, Charge separation, Comparative study, Copper, Electron transfer, Gallium, Indium sulfide, Kelvin probe, Order disorder, Order disorder transformation, Semiconductor materials, Solar cell, Surface electron state, Zinc oxide.

Abstract

Cu(In,Ga)Se₂ absorbers were investigated by surface photovoltage (SPV) in the Kelvin probe and fixed capacitor arrangements before and after deposition of CdS or In₂S₃ buffer layers as well as before and after deposition of ZnO window layers. Effects such as passivation of surface states, partial electron transfer from ZnO into In₂S₃, decrease of the ideality factor after deposition of ZnO and slow electron transfer through In₂S₃ were demonstrated. The results show that SPV measurements open opportunities for dedicated studies of charge separation at hetero-junctions between ordered and disordered semiconductors.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000A93

Links to Exploration step

Pascal:13-0229293

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comparative study of Cu(In,Ga)Se<sub>2</sub>
/CdS and Cu(In,Ga)Se<sub>2</sub>
/In<sub>2</sub>
S<sub>3</sub>
 systems by surface photovoltage techniques</title>
<author><name sortKey="Dittrich, Th" uniqKey="Dittrich T">Th. Dittrich</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gonzales, A" uniqKey="Gonzales A">A. Gonzales</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Físico, Universidad del Norte, km 5 Via Pto Colombia</s1>
<s2>Barranquilla</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>Barranquilla</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rada, T" uniqKey="Rada T">T. Rada</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Físico, Universidad del Norte, km 5 Via Pto Colombia</s1>
<s2>Barranquilla</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>Barranquilla</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rissom, T" uniqKey="Rissom T">T. Rissom</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zillner, E" uniqKey="Zillner E">E. Zillner</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sadewasser, S" uniqKey="Sadewasser S">S. Sadewasser</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>International Iberian Nanotechnology Laboratory, Avda. Mestre José Veiga s/n</s1>
<s2>4715-330 Braga</s2>
<s3>PRT</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4715-330 Braga</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lux Steiner, M" uniqKey="Lux Steiner M">M. Lux-Steiner</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0229293</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0229293 INIST</idno>
<idno type="RBID">Pascal:13-0229293</idno>
<idno type="wicri:Area/Main/Corpus">000A93</idno>
<idno type="wicri:Area/Main/Repository">001039</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term>
<term>Cadmium sulfide</term>
<term>Capacitor</term>
<term>Chalcopyrite</term>
<term>Charge separation</term>
<term>Comparative study</term>
<term>Copper</term>
<term>Electron transfer</term>
<term>Gallium</term>
<term>Indium sulfide</term>
<term>Kelvin probe</term>
<term>Order disorder</term>
<term>Order disorder transformation</term>
<term>Semiconductor materials</term>
<term>Solar cell</term>
<term>Surface electron state</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude comparative</term>
<term>Sonde Kelvin</term>
<term>Condensateur</term>
<term>Couche tampon</term>
<term>Etat électronique surface</term>
<term>Transfert électron</term>
<term>Séparation charge</term>
<term>Transformation ordre désordre</term>
<term>Ordre désordre</term>
<term>Semiconducteur</term>
<term>Chalcopyrite</term>
<term>Cellule solaire</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>Sulfure de cadmium</term>
<term>Sulfure d'indium</term>
<term>Oxyde de zinc</term>
<term>CdS</term>
<term>In2S3</term>
<term>ZnO</term>
<term>8432T</term>
<term>7320A</term>
<term>8460J</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Cu(In,Ga)Se<sub>2</sub>
 absorbers were investigated by surface photovoltage (SPV) in the Kelvin probe and fixed capacitor arrangements before and after deposition of CdS or In<sub>2</sub>
S<sub>3</sub>
 buffer layers as well as before and after deposition of ZnO window layers. Effects such as passivation of surface states, partial electron transfer from ZnO into In<sub>2</sub>
S<sub>3</sub>
, decrease of the ideality factor after deposition of ZnO and slow electron transfer through In<sub>2</sub>
S<sub>3</sub>
 were demonstrated. The results show that SPV measurements open opportunities for dedicated studies of charge separation at hetero-junctions between ordered and disordered semiconductors.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>535</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Comparative study of Cu(In,Ga)Se<sub>2</sub>
/CdS and Cu(In,Ga)Se<sub>2</sub>
/In<sub>2</sub>
S<sub>3</sub>
 systems by surface photovoltage techniques</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DITTRICH (Th.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GONZALES (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>RADA (T.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RISSOM (T.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ZILLNER (E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SADEWASSER (S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>LUX-STEINER (M.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Departamento de Físico, Universidad del Norte, km 5 Via Pto Colombia</s1>
<s2>Barranquilla</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>International Iberian Nanotechnology Laboratory, Avda. Mestre José Veiga s/n</s1>
<s2>4715-330 Braga</s2>
<s3>PRT</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1>
<s2>Strasbourg</s2>
<s3>FRA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>357-361</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000504170550790</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0229293</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Cu(In,Ga)Se<sub>2</sub>
 absorbers were investigated by surface photovoltage (SPV) in the Kelvin probe and fixed capacitor arrangements before and after deposition of CdS or In<sub>2</sub>
S<sub>3</sub>
 buffer layers as well as before and after deposition of ZnO window layers. Effects such as passivation of surface states, partial electron transfer from ZnO into In<sub>2</sub>
S<sub>3</sub>
, decrease of the ideality factor after deposition of ZnO and slow electron transfer through In<sub>2</sub>
S<sub>3</sub>
 were demonstrated. The results show that SPV measurements open opportunities for dedicated studies of charge separation at hetero-junctions between ordered and disordered semiconductors.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C20A</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude comparative</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Comparative study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estudio comparativo</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Sonde Kelvin</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Kelvin probe</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Sonda Kelvin</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Condensateur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Capacitor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Condensador</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Capa tampón</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Etat électronique surface</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Surface electron state</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Estado electrónico superficie</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Transfert électron</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Electron transfer</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Transferencia electrón</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Séparation charge</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Charge separation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Separación carga</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Transformation ordre désordre</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Order disorder transformation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Transformación desorden-orden</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Ordre désordre</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Order disorder</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Orden desorden</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Semiconducteur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Semiconductor materials</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Chalcopyrite</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Chalcopyrite</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Calcopirita</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Cobre</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Galio</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Sulfure de cadmium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Cadmium sulfide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Cadmio sulfuro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>CdS</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>8432T</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>7320A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>210</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1>
<s3>Strasbourg FRA</s3>
<s4>2012-05-14</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001039 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001039 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0229293
   |texte=   Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri